NPN 2 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideba

文件：60.99 Kbytes 页数：8 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. Features ■ Low current consumpt

文件：101.41 Kbytes 页数：11 Pages

PHI

飞利浦

NPN 2 GHz wideband transistor

文件：57.37 Kbytes 页数：8 Pages

JMNIC

锦美电子

NPN 2 GHz wideband transistor

文件：57.37 Kbytes 页数：8 Pages

JMNIC

锦美电子

NPN 2 GHz wideband transistor

文件：221.21 Kbytes 页数：10 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

文件：100.68 Kbytes 页数：14 Pages

恩XP

NPN 5 GHz wideband transistor

文件：146.26 Kbytes 页数：15 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

文件：100.68 Kbytes 页数：14 Pages

JMNIC

锦美电子