RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

NPN 5 GHz wideband transistor

General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. Features ■ Low current consumpt

文件：101.41 Kbytes 页数：11 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

文件：100.68 Kbytes 页数：14 Pages

恩XP

NPN 5 GHz wideband transistor

文件：146.26 Kbytes 页数：15 Pages

PHI

飞利浦

NPN 5 GHz wideband transistor

文件：100.68 Kbytes 页数：14 Pages

JMNIC

锦美电子

BFT25A_2015

文件：100.68 Kbytes 页数：14 Pages

JMNIC

锦美电子

NPN 5 GHz宽频带晶体管

Not recommended for new design in, please use replacement BFU520A.\nThe BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 • Gold metallization ensures excellent reliability\n• Low current consumption\n• Low noise;

恩XP

恩智浦