PNP 5 GHz wideband transistor

DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very hig

文件：48.04 Kbytes 页数：8 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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丝印：X1s；Package：SOT-23；PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA)

PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA

文件：58.7 Kbytes 页数：7 Pages

SIEMENS

西门子

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

PNP 4 GHz wideband transistor

DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT93. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is intended as a general purpo

文件：127.92 Kbytes 页数：24 Pages

PHI

飞利浦

PNP 5 GHz wideband transistor

文件：209.57 Kbytes 页数：10 Pages

PHI

飞利浦

PNP 4 GHz wideband transistor

文件：1.18945 Mbytes 页数：22 Pages

PHI

飞利浦

PNP 5 GHz宽频带晶体管

PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition fre High power gain\nHigh transition frequency\nLow intermodulation distortion;

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PNP Silicon RF Transistor for broadba...

Infineon

英飞凌

PNP 4 GHz宽频带晶体管

硅PNP晶体管，采用SOT323 (S-mini)塑料封装。BFT93W使用的晶体与采用SOT23封装的BFT93相同。 金属化镀金确保极佳的可靠性\n高功率增益\n小型封装;

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