PNP 4 GHz wideband transistor

DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W uses the same crystal as the SOT23 version, BFT92. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATION It is intended as a

文件：91.03 Kbytes 页数：12 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W (NPN)

文件：56.71 Kbytes 页数：7 Pages

SIEMENS

西门子

PNP 4 GHz wideband transistor

文件：371.97 Kbytes 页数：14 Pages

PHI

飞利浦

PNP 4 GHz宽频带晶体管

硅PNP晶体管，采用SOT323 (S-mini)塑料封装。BFT92W使用的晶体与采用SOT23封装的BFT92相同。 金属化镀金确保极佳的可靠性\n高功率增益\n小型封装;

恩XP

PNP Silicon RF Transistor for broadba...

Infineon

英飞凌

三极管

Nexperia

安世