NPN 5 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noi

文件：76.55 Kbytes 页数：10 Pages

PHI

PHI

Silicon NPN Planar RF Transistor

Features ● High power gain ● Low noise figure ● High transition frequency Applications     RF amplifier up to GHz range specially for wide band antenna amplifier.

文件：145.69 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

SMALL SIGNAL NPN RF TRANSISTOR

文件：484.52 Kbytes 页数：4 Pages

SEME-LAB

丝印：P2-；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise and High Gain NF = 1.3 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain ︱ S21e︱ 2 = 11.5 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • De

文件：263.82 Kbytes 页数：3 Pages

ISC

无锡固电

NPN 5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. FEATURES • High power gain • Low noise figure • Low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

文件：17.46903 Mbytes 页数：9 Pages

TGS

Silicon NPN Planar RF Transistor

Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Wide band amplifier up to GHz range.

文件：218.49 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：P2-；Package：SOT-23；NPN 5 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. FEATURES • High power gain • Low noise figure • Low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

文件：118.61 Kbytes 页数：12 Pages

PHI

PHI

NPN WIDEBAND TRANSISTOR

Features • RF Wideband Amplifier/Oscillator • 5GHz Transition Frequency • Low Intermodulation Distortion • High Power Gain • Low Noise

文件：69.89 Kbytes 页数：5 Pages

DIODES

美台半导体

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to

文件：64.05 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司