2.0mm Pitch Pin Header Dual Row, Surface Mount

文件：116.1 Kbytes 页数：1 Pages

GCT

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：311.53 Kbytes 页数：15 Pages

恩XP

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：159.54 Kbytes 页数：14 Pages

PHI

飞利浦

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：311.53 Kbytes 页数：15 Pages

恩XP

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：159.54 Kbytes 页数：14 Pages

PHI

飞利浦

Dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Special

文件：146.38 Kbytes 页数：14 Pages

PHI

飞利浦

Dual-gate MOS-FET

FEATURES  Specially designed for use at 9 to 12 V supply voltage  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz  Superior cross-modulation performance during AGC. APPLICATIONS  VHF and UHF appl

文件：471.96 Kbytes 页数：16 Pages

恩XP

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

飞利浦

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

飞利浦

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

飞利浦