SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C.

文件：487.41 Kbytes 页数：15 Pages

PHI

PHI

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件：116.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件：136.45 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-220

ON

上传：深圳市芯立阳电子技术有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司