SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

文件：111.34 Kbytes 页数：5 Pages

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

文件：122.39 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

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文件：212.9 Kbytes 页数：8 Pages

ETC1List of Unclassifed Manufacturers

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDT64C APPLICATIONS ·For audio output stages and general purpose amplifier and switching applications

文件：91.86 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：93.45 Kbytes 页数：3 Pages

SAVANTIC

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

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Silicon NPN Darlington Power Transistor

文件：137.96 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件：114.57 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

文件：135.8 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans Darlington NPN 120V 12A 3-Pin(3+Tab) TO-220AB

NJS