DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors • These are Pb−Free Devices*

文件：105.38 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(12A,125W)

文件：170.48 Kbytes 页数：4 Pages

MOSPEC

统懋

Complementary Silicon Plastic Power Darlingtons

Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors

文件：110.06 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

PNP SILICON DARLINGTONS POWER TRANSISTORS

PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS.

文件：77.75 Kbytes 页数：4 Pages

COMSET

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications

文件：251.73 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -lc= -12A • Collector-Emitter Saturation Voltage- : VCE(sat)=-2.0V(Max.)@ lc= -5A • Complement to Type BDV65/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications

文件：131.54 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

文件：120.77 Kbytes 页数：6 Pages

POINN

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.

文件：137.57 Kbytes 页数：3 Pages

SAVANTIC

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25 °C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A

文件：643.99 Kbytes 页数：5 Pages

TRSYS

Transys Electronics

Silicon PNP Power Transistors

文件：139.15 Kbytes 页数：3 Pages

SAVANTIC