SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

文件：111.34 Kbytes 页数：5 Pages

COMSET

SILICON DARLINGTON POWER TRANSISTORS

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：212.9 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

文件：122.39 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

文件：137.96 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件：114.57 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

文件：135.8 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT65A - 单晶体管 双极, 达林顿, NPN, 80 V, 125 W, 12 A, 1500 hFE

The BDT65A is a NPN silicon epitaxial Power Transistor in monolithic Darlington circuit for audio output stages, general purpose amplifier and switching applications. ·PNP complement BDT64A;

TT Electronics

Trans Darlington NPN 80V 12A 3-Pin(3+Tab) TO-220AB

NJS

BJT 双极性三极管

SPTECH

质超微