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BDT64C

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C.

文件:487.41 Kbytes 页数:15 Pages

PHI

PHI

PHI

BDT64C

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS.

文件:109.99 Kbytes 页数:5 Pages

COMSET

BDT64C

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

文件:122.24 Kbytes 页数:2 Pages

ISC

无锡固电

BDT64C

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BDT64C

Silicon PNP Darlington Power Transistor

文件:137.99 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT64CF

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件:136.45 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT64CF

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件:116.1 Kbytes 页数:2 Pages

ISC

无锡固电

BDT64CF

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C.

文件:487.41 Kbytes 页数:15 Pages

PHI

PHI

PHI

BDT64C

Darlington BJT

NJS

NJS

BDT64C

Transistor

Comset

晶体管资料

  • 型号:

    BDT64C

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-P+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    12A

  • 最大工作频率:

    >10MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BDV64C,BDX64C,ECG2344,

  • 最大耗散功率:

    125W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-89

  • vtest:

    120

  • htest:

    10000100

  • atest:

    12

  • wtest:

    125

详细参数

  • 型号:

    BDT64C

  • 制造商:

    TT Electronics/ Semelab

  • 功能描述:

    DARLINGTON TRANSISTOR TO-220

  • 功能描述:

    DARLINGTON TRANSISTOR, TO-220

  • 制造商:

    Distributed By MCM

  • 功能描述:

    PNP, 120V,12A 125W Swo Transistor TO-220Ab Darlin

  • 制造商:

    SEMELAB

  • 功能描述:

    DARLINGTON TRANSISTOR, PNP, 120V, 12A, TO-220; Transistor

  • Polarity:

    PNP; Collector Emitter Voltage

  • V(br)ceo:

    -120V; Power Dissipation

  • Pd:

    125W; DC Collector

  • Current:

    -12A; DC Current Gain

  • hFE:

    750; No. of

  • Pins:

    3 ;RoHS

  • Compliant:

    Yes

供应商型号品牌批号封装库存备注价格
ST/意法
25+
TO220F
20300
ST/意法原装特价BDT64C即刻询购立享优惠#长期有货
询价
24+
TO-220
568
询价
ST
23+
TO-220
5000
原装正品,假一罚十
询价
ST
25+
TO-220
6000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
24+
TO-220
15000
原装现货热卖
询价
PHL/ST
17+
TO-220
6200
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
24+
TO-220
5000
全现原装公司现货
询价
ST
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
23+
TO-220
20000
专做原装正品,假一罚百!
询价
更多BDT64C供应商 更新时间2026-1-17 14:14:00