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BDT64C

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C.

文件:487.41 Kbytes 页数:15 Pages

PHI

飞利浦

PHI

BDT64C

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS.

文件:109.99 Kbytes 页数:5 Pages

COMSET

BDT64C

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

文件:122.24 Kbytes 页数:2 Pages

ISC

无锡固电

BDT64C

Silicon PNP Darlington Power Transistor

文件:137.99 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT64C

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BDT64CF

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件:136.45 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT64CF

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

文件:116.1 Kbytes 页数:2 Pages

ISC

无锡固电

BDT64CF

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C.

文件:487.41 Kbytes 页数:15 Pages

PHI

飞利浦

PHI

BDT64C

Darlington BJT

NJS

BDT64C

Transistor

Comset

详细参数

  • 型号:

    BDT64C

  • 制造商:

    TT Electronics/ Semelab

  • 功能描述:

    DARLINGTON TRANSISTOR TO-220

  • 功能描述:

    DARLINGTON TRANSISTOR, TO-220

  • 制造商:

    Distributed By MCM

  • 功能描述:

    PNP, 120V,12A 125W Swo Transistor TO-220Ab Darlin

  • 制造商:

    SEMELAB

  • 功能描述:

    DARLINGTON TRANSISTOR, PNP, 120V, 12A, TO-220; Transistor

  • Polarity:

    PNP; Collector Emitter Voltage

  • V(br)ceo:

    -120V; Power Dissipation

  • Pd:

    125W; DC Collector

  • Current:

    -12A; DC Current Gain

  • hFE:

    750; No. of

  • Pins:

    3 ;RoHS

  • Compliant:

    Yes

供应商型号品牌批号封装库存备注价格
ST/意法
25+
TO220F
20300
ST/意法原装特价BDT64C即刻询购立享优惠#长期有货
询价
ST/意法
2410+
TO-220
15300
原装正品.假一赔百.正规渠道.原厂追溯.
询价
24+
TO-220
568
询价
ST
23+
TO-220
5000
原装正品,假一罚十
询价
ST
25+
TO-220
6000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
24+
TO-220
15000
原装现货热卖
询价
PHL/ST
17+
TO-220
6200
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
24+
TO-220
5000
全现原装公司现货
询价
ST
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
更多BDT64C供应商 更新时间2025-10-8 14:14:00