| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BDV66 | POWER TRANSISTORS(16A,60-100V,125W) 16 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS 文件：102.73 Kbytes 页数：3 Pages | MOSPEC 统懋 | MOSPEC | |
BDV66 | PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. 文件：79.06 Kbytes 页数：4 Pages | COMSET | COMSET | |
BDV66 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -16A • Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A • Complement to Type BDV67/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications 文件：115.59 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
BDV66 | Silicon PNP Darlington Power Transistor 文件：139.61 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -16A • Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A • Complement to Type BDV67/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications 文件：115.59 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
POWER TRANSISTORS(16A,60-100V,125W) 16 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS 文件：102.73 Kbytes 页数：3 Pages | MOSPEC 统懋 | MOSPEC | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. 文件：79.06 Kbytes 页数：4 Pages | COMSET | COMSET | ||
POWER TRANSISTORS(16A,60-100V,125W) 16 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS 文件：102.73 Kbytes 页数：3 Pages | MOSPEC 统懋 | MOSPEC | ||
PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. 文件：79.06 Kbytes 页数：4 Pages | COMSET | COMSET | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -16A • Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -10A • Complement to Type BDV67/A/B/C APPLICATIONS • Designed for audio output stages and general amplifier and switching applications 文件：115.59 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
16A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BDW84A,2SB1079,
- 最大耗散功率：
200W
- 放大倍数：
β>1000
- 图片代号：
B-62
- vtest：
60
- htest：
999900
- atest：
16
- wtest：
200
详细参数
- 型号：
BDV66
- 制造商：
ISC
- 制造商全称：
Inchange Semiconductor Company Limited
- 功能描述：
isc Silicon PNP Darlington Power Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
询价 | |||
ST |
25+ |
TO-3P |
16900 |
原装，请咨询 |
询价 | ||
ST |
2511 |
TO-3P |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
询价 | ||
PHI |
24+/25+ |
50 |
原装正品现货库存价优 |
询价 | |||
ST |
24+ |
TO-218 |
5000 |
全现原装公司现货 |
询价 | ||
恩XP |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
PHIL |
24+ |
原厂原装 |
5850 |
ELE优势库存国外货源 |
询价 | ||
ST/意法 |
23+ |
TO-218 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
恩XP |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 |
