DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDW39 BDW40 BDW41 BDW42 BDW43 (NPN) BDW44 BDW45 BDW46 BDW47 BDW48 (PNP)

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MOTOROLA

摩托罗拉

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 5A • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A • Complement to Type BDW48 APPLICATIONS • Designed for general purpose and low

文件：251.33 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 5A • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A • Complement to Type BDW48 APPLICATIONS • Designed for general purpose and low

文件：137.17 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-220

ON

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