DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDW39 BDW40 BDW41 BDW42 BDW43 (NPN) BDW44 BDW45 BDW46 BDW47 BDW48 (PNP)

文件：414.16 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= -5A • Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A • Complement to Type BDW39 APPLICATIONS • Designed for general purpose and

文件：251 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= -5A • Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A • Complement to Type BDW39 APPLICATIONS • Designed for general purpose and

文件：137.45 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-220

ON

上传：深圳市芯立阳电子技术有限公司

TO-220

ST/意法

上传：深圳庞田科技有限公司