DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sus

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Darlington Complementary Silicon Power Transistors

BDW39 BDW40 BDW41 BDW42 BDW43 (NPN) BDW44 BDW45 BDW46 BDW47 BDW48 (PNP)

文件：176.16 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

BDW39 BDW40 BDW41 BDW42 BDW43 (NPN) BDW44 BDW45 BDW46 BDW47 BDW48 (PNP)

文件：414.16 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= -5A • Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max.)@ IC= -5.0A = -3.0V(Max.)@ IC= -10A • Complement to Type BDW41 APPLICATIONS •

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ISC

无锡固电

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DCCurrent Gain - hFE = 2500 (typ) @ Ic = 5.0Adc. • Collector Emitter Susta

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Darlington Complementary Silicon Power Transistors

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Darlington Complementary Silicon Power Transistors

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Darlington Complementary Silicon Power Transistors

This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (

文件：89.17 Kbytes 页数：7 Pages

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Darlington Complementary Silicon Power Transistors

文件：95.17 Kbytes 页数：7 Pages

ONSEMI

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15 A，80 V PNP 达林顿双极功率晶体管

This series of plastic, medium-powerNPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices. • High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc.\n• Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.)BDW46 VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47\n• Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc VCE(sat) = 3.0 Vdc (max.) @ IC = ;

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