| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BDT88 | Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou 文件：63.88 Kbytes 页数：3 Pages | ISC 无锡固电 | ISC | |
BDT88 | isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou 文件：116.05 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
BDT88 | Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ Ic=-5A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio outp 文件：129.36 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BDT88 | SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87. 文件：359 Kbytes 页数：3 Pages | COMSET | COMSET | |
BDT88 | SILICON POWER TRANSISTORS 文件：151.45 Kbytes 页数：4 Pages | COMSET | COMSET | |
BDT88 | Silicon PNP Power Transistors 文件：97.83 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | |
BDT88 | Silicon PNP Power Transistors 文件：99.43 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | |
isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in 文件：111.26 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in 文件：127.97 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
BDT88 | Transistor | Comset | Comset |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
120V
- 最大电流允许值：
15A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
2SA1041,
- 最大耗散功率：
117W
- 放大倍数：
- 图片代号：
B-89
- vtest：
120
- htest：
999900
- atest：
15
- wtest：
117
详细参数
- 型号：
BDT88
- 制造商：
ISC
- 制造商全称：
Inchange Semiconductor Company Limited
- 功能描述：
isc Silicon PNP Power Transistors
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
恩XP |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
恩XP |
22+ |
TO-220 |
91528 |
询价 | |||
PHI |
24+/25+ |
25 |
原装正品现货库存价优 |
询价 | |||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
JD/晶导 |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
PHI |
23+ |
NA |
2186 |
专做原装正品,假一罚百! |
询价 | ||
PHSSEMICONDUCTOR |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ph |
25+ |
500000 |
行业低价,代理渠道 |
询价 | |||
PHI |
2402+ |
TO-220 |
8324 |
原装正品!实单价优! |
询价 |
