| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BDT64 | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. 文件：487.41 Kbytes 页数：15 Pages | PHI PHI | PHI | |
BDT64 | SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. 文件：109.99 Kbytes 页数：5 Pages | COMSET | COMSET | |
BDT64 | isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications 文件：122.24 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
BDT64 | Silicon PNP Darlington Power Transistor 文件：137.99 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BDT64 | SEMICONDUCTORS 文件：2.43533 Mbytes 页数：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. 文件：109.99 Kbytes 页数：5 Pages | COMSET | COMSET | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. 文件：487.41 Kbytes 页数：15 Pages | PHI PHI | PHI | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications 文件：122.24 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector Current -IC= -12A • High DC Current Gain-hFE= 1000(Min)@ IC= -5A • Complement to Type BDT65F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications 文件：136.45 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic enveloppe. NPN complements are BDT65,BDT65A,BDT65B AND BDT65C. 文件：487.41 Kbytes 页数：15 Pages | PHI PHI | PHI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
12A
- 最大工作频率：
>10MHZ
- 引脚数：
3
- 可代换的型号：
BDV64A,BDW46,BDW94B,BDX88B,2N6051,
- 最大耗散功率：
125W
- 放大倍数：
β>1000
- 图片代号：
B-89
- vtest：
80
- htest：
10000100
- atest：
12
- wtest：
125
详细参数
- 型号：
BDT64
- 制造商：
Distributed By MCM
- 功能描述：
SUB ONLY TRANSISTOR TO-220AB PNP -60V -12A 125W BCE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
ST |
17+ |
TO-220 |
6200 |
询价 | |||
NS/国半 |
23+ |
TO-223-5 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
ST/意法 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ST |
26+ |
SOP |
86720 |
全新原装正品价格最实惠 假一赔百 |
询价 | ||
ST |
26+ |
TO-TO-220 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST |
25+ |
TO-220 |
20000 |
原装，请咨询 |
询价 | ||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
询价 | ||
ST |
25+ |
TO-220 |
20000 |
原装 |
询价 |
相关规格书
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- BDV67DF
