P-Channel Enhancement Mode MOSFET

Features • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

文件：160.7 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel 20-V (D-S) MOSFET

文件：1.04069 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode MOSFET

Features · -20V/-2.8A RDS(ON)= 56mW (typ.) @ VGS= -4.5V RDS(ON)= 85mW (typ.) @ VGS= -2.5V RDS(ON)= 106mW (typ.) @ VGS= -1.8V · Super High Dense Cell Design · Reliable and Rugged Applications · Power Management in Notebook Computer, Portable Equipment and Battery

文件：179.33 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Mosfet

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：1.0013 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode MOSFET

Features · -20V/-2.8A RDS(ON)= 56mW (typ.) @ VGS= -4.5V RDS(ON)= 85mW (typ.) @ VGS= -2.5V RDS(ON)= 106mW (typ.) @ VGS= -1.8V · Super High Dense Cell Design · Reliable and Rugged Applications · Power Management in Notebook Computer, Portable Equipment and Battery

文件：179.33 Kbytes 页数：10 Pages

ANPEC

茂达电子