N-Channel Enhancement Mode MOSFET

Features • 30V/3.5A, RDS(ON)=70mΩ(typ.) @ VGS=5V RDS(ON)=42mΩ(typ.) @ VGS=10V • Super High Dense Cell Design • High Power and Current Handling Capability • SOT-23 Package Applications • Switching Regulators • Switching Converters

文件：115.65 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/3.5A, RDS(ON)=70mΩ(typ.) @ VGS=5V RDS(ON)=42mΩ(typ.) @ VGS=10V • Super High Dense Cell Design • High Power and Current Handling Capability • SOT-23 Package Applications • Switching Regulators • Switching Converters

文件：115.65 Kbytes 页数：10 Pages

ANPEC

茂达电子

Stripline Mounting Fixed Attenuators

文件：221.61 Kbytes 页数：3 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：219.1 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

N-Channel 30-V(D-S) MOSFET

FEATURES ● P ower MOSFET ● 1 00 Rg Tested ● -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable.

文件：318.25 Kbytes 页数：5 Pages

GWSEMI

唯圣电子