P-Channel Enhancement Mode MOSFET

Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23-6 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Po

文件：598.1 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23-6 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Po

文件：598.1 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel MOSFET

Sinopower

大中

HEXFET짰 Power MOSFET

V(BR)DSS 75V RDS(on) typ. 17.6mΩ max. 22mΩ ID (Silicon Limited) 45A ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista

文件：288.39 Kbytes 页数：13 Pages

IRF

HEXFET짰 Power MOSFET

V(BR)DSS 75V RDS(on) typ. 17.6mΩ max. 22mΩ ID (Silicon Limited) 45A ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista

文件：288.39 Kbytes 页数：13 Pages

IRF

HEXFET짰 Power MOSFET

V(BR)DSS 75V RDS(on) typ. 17.6mΩ max. 22mΩ ID (Silicon Limited) 45A ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista

文件：288.39 Kbytes 页数：13 Pages

IRF