Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：219.1 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

场效应晶体管

CBI

创基电子

N-Channel 30-V(D-S) MOSFET

FEATURES ● P ower MOSFET ● 1 00 Rg Tested ● -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable.

文件：318.25 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes 页数：19 Pages

NSC

国半

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes 页数：19 Pages

NSC

国半

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE