P-Channel Enhancement Mode MOSFET

Features • -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=560mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

文件：155.14 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-0.9A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=560mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

文件：155.14 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel 20-V (D-S) MOSFET

文件：1.04025 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

文件：1.04013 Mbytes 页数：9 Pages

VBSEMI

微碧半导体