N-Channel Enhancement Mode MOSFET

Features • 30V/50A, RDS(ON)=4.5mW (typ.) @ VGS=10V RDS(ON)=7mW (typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters

文件：199.05 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/50A, RDS(ON)=4.5mW (typ.) @ VGS=10V RDS(ON)=7mW (typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters

文件：199.05 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/50A, RDS(ON)=4.5mW (typ.) @ VGS=10V RDS(ON)=7mW (typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters

文件：199.05 Kbytes 页数：11 Pages

ANPEC

茂达电子

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.31 Kbytes 页数：1 Pages

ASI