APM2314A

N-Channel Enhancement Mode MOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

APM2314AC-TR

N-Channel Enhancement Mode MOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

APM2314AC-TRL

N-Channel 20 V (D-S) MOSFET

BPT-BP2314

SILICONPHOTOTRANSISTOR

APPLICATIONS ●RemoteControl,●PhotoDetector,●SmokeDetector,●AutomaticControlSystem●OpticalEncoder ABSOLUTEMAXIMUMRATINGS(Ta=25) ●Collector-to-EmitterSaturationVoltageVce(SAT).(Ib=100uA)/Ic=2mA.........0.4V(Max.) ●Emitter-to-collectorBreakdownVoltage(BVeco)......

BPT-BP2314

LED

C2314

27MHzCBTransceiverDriverApplications

CAS-2314

VarifocalDomeIPNetworkCamera

CAS-2314

VarifocalDomeIPNetworkCamera

CAS-2314

VarifocalDomeIPNetworkCamera

CES2314

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,4A,RDS(ON)=50mΩ@VGS=10V. RDS(ON)=70mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.