P-Channel Enhancement Mode MOSFET

Features ● -20V/-4.5A , RDS(ON)=28mW (typ.) @ VGS=-4.5V RDS(ON)=38mW (typ.) @ VGS=-2.5V RDS(ON)=55mW (typ.) @ VGS=-1.8V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) Applications ● Power Management in Notebook Computer, Portable Equip

文件：178.5 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel 20-V (D-S) MOSFET

文件：1.040369 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-23 package.

文件：396.52 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead-free plating ; RoHS compliant. RDS(ON) = 120mW @VGS = -2.5V.

文件：398.36 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual Single-Pole 8-Pin SOIC OptoMOS짰 Relay

文件：126.1 Kbytes 页数：7 Pages

IXYS

艾赛斯