P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-23 package.

文件：396.52 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead-free plating ; RoHS compliant. RDS(ON) = 120mW @VGS = -2.5V.

文件：398.36 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

Silicon NPN Transistor High Voltage Fast Switching Power Darlington

Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performances in the linear region make this devi

文件：28.45 Kbytes 页数：2 Pages

NTE

Simple Car Audio Controller?

DESCRIPTION PT2317A and PT2317B are four-channel digital audio processors utilizing CMOS Technology specially designed for car audio and hi-fi systems. Volume, Right/Left Balance, Bass, Treble, Fader and Loudness Functions are incorporated into a single chip Selectable gain, direct key mode as

文件：136.52 Kbytes 页数：3 Pages

PTC

普诚科技

LINEAR CATV AMPLIFIER

Product Description The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of bett

文件：151.98 Kbytes 页数：8 Pages

RFMD

威讯联合