CES2317

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CES2317

P-Channel Enhancement Mode Field Effect Transistor

30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant. RDS(ON)=120mW@VGS=-2.5V.

CPC2317N

DualSingle-Pole8-PinSOICOptoMOS짰Relay

CPC2317NTR

DualSingle-Pole8-PinSOICOptoMOS짰Relay

DA2317-AL

SMTGateDriveTransformers

DA2317-AL_

SMTGateDriveTransformers

ENA2317

2-phaseStepperMotorDriver

MB-2317

MBMECHANICALBUZZER

MEM2317S

MP2317

26V,1A,600kHz,High-Efficiency,Synchronous,Step-DownConverter