N-Channel Enhancement Mode MOSFET

Features • 20V/1.5A , RDS(ON)=195mΩ(typ.) @ VGS=4.5V RDS(ON)=295mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

文件：113.26 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode MOSFET

Features • 20V/1.5A , RDS(ON)=195mΩ(typ.) @ VGS=4.5V RDS(ON)=295mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

文件：113.26 Kbytes 页数：10 Pages

ANPEC

茂达电子

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