P-Channel Enhancement Mode MOSFET

Features ● -20V/-4.5A , RDS(ON)=28mW (typ.) @ VGS=-4.5V RDS(ON)=38mW (typ.) @ VGS=-2.5V RDS(ON)=55mW (typ.) @ VGS=-1.8V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) Applications ● Power Management in Notebook Computer, Portable Equip

文件：178.5 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features ● -20V/-4.5A , RDS(ON)=28mW (typ.) @ VGS=-4.5V RDS(ON)=38mW (typ.) @ VGS=-2.5V RDS(ON)=55mW (typ.) @ VGS=-1.8V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) Applications ● Power Management in Notebook Computer, Portable Equip

文件：178.5 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features ● -20V/-4.5A , RDS(ON)=28mW (typ.) @ VGS=-4.5V RDS(ON)=38mW (typ.) @ VGS=-2.5V RDS(ON)=55mW (typ.) @ VGS=-1.8V ● Super High Dense Cell Design ● Reliable and Rugged ● Lead Free Available (RoHS Compliant) Applications ● Power Management in Notebook Computer, Portable Equip

文件：178.5 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel 20-V (D-S) MOSFET

文件：1.04054 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

文件：1.040369 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode MOSFET

● -20V/-4.5A ,\n   RDS(ON)=28mW (typ.) @ VGS=-4.5V\n   RDS(ON)=38mW (typ.) @ VGS=-2.5V\n   RDS(ON)=55mW (typ.) @ VGS=-1.8V\n● Super High Dense Cell Design\n● Reliable and Rugged\n● Lead Free Available (RoHS Compliant)Applications\n● Power Management in Notebook Computer, Portable Equipment and Batte;

Anpec

茂达电子

MOS(场效应管)

Sinopower

大中