P-Channel Enhancement Mode MOSFET

Features • -20V/-4A, RDS(ON)=35mW (typ.) @ VGS=-4.5V RDS(ON)=45mW (typ.) @ VGS=-2.5V RDS(ON)=60mW (typ.) @ VGS=-1.8V • Super High Dense Cell Design • Reliable and Rugged • Lead FreeAvailable (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipm

文件：180.04 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-4A, RDS(ON)=35mW (typ.) @ VGS=-4.5V RDS(ON)=45mW (typ.) @ VGS=-2.5V RDS(ON)=60mW (typ.) @ VGS=-1.8V • Super High Dense Cell Design • Reliable and Rugged • Lead FreeAvailable (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipm

文件：180.04 Kbytes 页数：10 Pages

ANPEC

茂达电子

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System

文件：15.33 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System

文件：15.33 Kbytes 页数：1 Pages

ASI

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5A, RDS(ON) = 50mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：542.76 Kbytes 页数：5 Pages

CET-MOS

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