NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System

文件：15.33 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System

文件：15.33 Kbytes 页数：1 Pages

ASI

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5A, RDS(ON) = 50mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：542.76 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -4A, RDS(ON) = 50mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant

文件：923.36 Kbytes 页数：5 Pages

CET-MOS

华瑞