CD2315

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASICD2315isdesignedforbroadbandamplifierapplicationsincommercialandamateurcommunicationequipment. FEATURES: •PG=18dBmin.at75W/30MHz •IMD3=-30dBcmax.at75W(PEP) •Omnigold™MetalizationSystem

CEH2315

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEN2315

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant

CES2315

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant

CMEB2315

MechanicalBuzzer(DC)

CPD2315

InductorforDigitalAMP

Features： Corematerial:Ferrite Coreandwindingloss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.html Environmental:RoHScompliant,halogenfree Weight:29.29g MoistureSensitivity:Level(MSL)1 (unlimitedfloorlifeat

CSS-2315E

2.30InchSingleDigitDisplay

CSS-2315G

2.3InchSingleDigitDisplay

CSS-2315S

2.30InchSingleDigitDisplay

CTDAT2315F

PowerInductorforDigitalAmplifier-Shielded