N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

文件：151.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

文件：151.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel MOSFET

Sinopower

大中集成电路

Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications

文件：600.09 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

N-Channel Enhancement Mode Power MOSFET

文件：520.59 Kbytes 页数：6 Pages

Belling

上海贝岭

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：281.47 Kbytes 页数：4 Pages

CET

华瑞