Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ CSP Pa

文件：1.17636 Mbytes 页数：19 Pages

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ CSP Pa

文件：1.17636 Mbytes 页数：19 Pages

ROHM

罗姆

N-Channel Enhancement Mode Power MOSFET

文件：520.59 Kbytes 页数：6 Pages

BELLING

上海贝岭

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：281.47 Kbytes 页数：4 Pages

CET

华瑞

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

文件：1.88321 Mbytes 页数：9 Pages

VBSEMI

微碧半导体