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BD233

丝印:BD233;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件:2.48834 Mbytes 页数:5 Pages

DGNJDZ

南晶电子

BD233

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件:125.97 Kbytes 页数:1 Pages

WINNERJOIN

永而佳

BD233

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Complementary pair with BD234. Applications Medium power linear and switching applications.

文件:902.53 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BD233

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件:58.18 Kbytes 页数:1 Pages

TEL

BD233

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

文件:193.51 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD233

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

文件:100.85 Kbytes 页数:3 Pages

SAVANTIC

BD233

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

文件:283.29 Kbytes 页数:3 Pages

MCC

BD233

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Compliant and PPAP Capable also. Note: For AEC-Q101 compliant products, please use suffix -AQ in the part number while ordering. Applications • Intended for use in Medium Power Linear Switching Applications

文件:1.20963 Mbytes 页数:5 Pages

MULTICOMP

易络盟

BD233

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

文件:180.88 Kbytes 页数:3 Pages

WEITRON

BD233

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件:1.17188 Mbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

晶体管资料

  • 型号:

    BD233(-6...-16)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    45V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD175,BD375,BD437,3DD61B,

  • 最大耗散功率:

    25W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    45

  • htest:

    999900

  • atest:

    2

  • wtest:

    25

技术参数

  • PCM(W):

    1.25

  • IC(A):

    2

  • VCBO(V):

    45

  • VCEO(V):

    45

  • VEBO(V):

    5

  • hFEMin:

    40

  • hFE@VCE(V):

    2

  • hFE@IC(A):

    0.15

  • VCE(sat)(V):

    0.6

  • VCE(sat)\u001E@IC(A):

    1

  • VCE(sat)\u001E@IB(A):

    0.1

  • Package:

    TO-126

供应商型号品牌批号封装库存备注价格
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货BD233即刻询购立享优惠#长期有排单订
询价
ST
2021+
TO-126
6800
原厂原装,欢迎咨询
询价
ST
95+
TO-126
55
原装
询价
MOT
24+
1300
询价
ST
18+
TO-126
85600
保证进口原装可开17%增值税发票
询价
CJ/长电
23+
126
50000
全新原装正品现货,支持订货
询价
FSC
23+
TO-126
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-126
6000
十年配单,只做原装
询价
CJ/长电
25+
126
8880
原装认准芯泽盛世!
询价
ph
25+
500000
行业低价,代理渠道
询价
更多BD233供应商 更新时间2025-12-24 15:05:00