N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

文件：151.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications

文件：600.09 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ CSP Pa

文件：1.17636 Mbytes 页数：19 Pages

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver

Features ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and Non-inverting Inputs ◼ CSP Pa

文件：1.17636 Mbytes 页数：19 Pages

ROHM

罗姆