N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

文件：151.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Anpec

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

文件：151.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Comput

文件：151.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel MOSFET

Sinopower

大中集成电路