P-Channel Enhancement Mode MOSFET

Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer, Portable Equipmen

文件：633.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Anpec

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer, Portable Equipmen

文件：633.79 Kbytes 页数：9 Pages

ANPEC

茂达电子

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. FEATURES: • PG = 9.5 dB min. at 7 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

文件：18.28 Kbytes 页数：1 Pages

ASI

HEXFET짰 Power MOSFET

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IRF

Advanced Process Technology

文件：683.76 Kbytes 页数：11 Pages

Infineon

英飞凌