P-Channel Enhancement Mode MOSFET

Features • -16V/-3.5A , RDS(ON)=60mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V RDS(ON)=83mΩ(typ.) @ VGS=-1.8V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •SOT-23 Package Applications •Power M

文件：160.23 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Anpec

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -16V/-3.5A , RDS(ON)=60mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V RDS(ON)=83mΩ(typ.) @ VGS=-1.8V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •SOT-23 Package Applications •Power M

文件：160.23 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -16V/-3.5A , RDS(ON)=60mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V RDS(ON)=83mΩ(typ.) @ VGS=-1.8V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •SOT-23 Package Applications •Power M

文件：160.23 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel 30 V (D-S) MOSFET

文件：1.05155 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET

Sinopower

大中集成电路