N-Channel Enhancement Mode MOSFET

Features • 20V/2.8A , RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered

文件：599.29 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Anpec

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/2.8A , RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered

文件：599.29 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/2.8A , RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered

文件：599.29 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel 20 V (D-S) MOSFET

文件：1.88349 Mbytes 页数：9 Pages

VBSEMI

微碧半导体