N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pb-free (meets ROHS & Sony 25

文件：69.31 Kbytes 页数：5 Pages

AOSMD

万国半导体

HIGH VOLTAGE, PHOTO MOS RELAY

文件：157.89 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE, PHOTO MOS RELAY

文件：168.96 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit

文件：76.22 Kbytes 页数：3 Pages

Panasonic

松下