| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AOW7S65 | 650V 7A a MOS TM Power Transistor GeneralDescription TheAOW7S65&AOWF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythe | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
AOW7S65 | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=7.0A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max) •100avalanchetested •MinimumLot-to-L | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOSPowerTransistor GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOS GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=7.0A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max) •100avalanchetested •MinimumLot-to-L | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOSPowerTransistor GeneralDescription TheAOD7S65&AOU7S65&AOI7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalancheca | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
650V7AaMOSPowerTransistor GeneralDescription TheAOD7S65&AOU7S65&AOI7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalancheca | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOSPowerTransistor GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
650V7AaMOS GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOS GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
650V7AaMOSPowerTransistor GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOS GeneralDescription TheAOT7S65L&AOB7S65L&AOTF7S65L&AOTF7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguar | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7.0A@TC=25℃ ·DrainSourceVoltage- :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650V7AaMOSPowerTransistor GeneralDescription TheAOD7S65&AOU7S65&AOI7S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalancheca | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD |
详细参数
- 型号：
AOW7S65
- 功能描述：
MOSFET N-CH 650V 7A TO262F
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
aMOS™
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
2019+ |
TO262 |
3470 |
原厂渠道 可含税出货 |
询价 | ||
AOS |
TO-262 |
20000 |
原装正品 |
询价 | |||
Alpha&OmegaSemiconductor |
2019+ |
TO-262-3LongLeads |
65500 |
I2Pak |
询价 | ||
23+ |
N/A |
45880 |
正品授权货源可靠 |
询价 | |||
AOS/万代 |
23+ |
TO-262 |
24190 |
原装正品代理渠道价格优势 |
询价 | ||
AOS/万代 |
21+ |
TO-262 |
30000 |
优势供应 实单必成 可13点增值税 |
询价 | ||
AOS |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
AOS/万代 |
TO262 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
AOS/万代 |
23+ |
TO262F |
10000 |
公司只做原装正品 |
询价 | ||
AOS/万代 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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