650V 7A a MOS Power Transistor

General Description The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche ca

文件：363.79 Kbytes 页数：7 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.65Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件：353.75 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

650V 7A a MOS TM Power Transistor

General Description The AOW7S65 & AOWF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability the

文件：267.09 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 7.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.65Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：344.05 Kbytes 页数：2 Pages

ISC

无锡固电

650V 7A a MOS TM Power Transistor

General Description The AOW7S65 & AOWF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability the

文件：267.09 Kbytes 页数：6 Pages

AOSMD

万国半导体