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AQV414

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414

HIGH VOLTAGE, PHOTO MOS RELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414

HIGH VOLTAGE, PHOTO MOS RELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:6-DIP(0.300",7.62mm) 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

PanasonicElectricWorks

Panasonic Electric Works

AQV414

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:6-DIP(0.300",7.62mm) 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

PanasonicElectricWorks

Panasonic Electric Works

AQV414A

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414AX

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414AZ

Normally closed 6-pin type of 400V load voltage Measuring instruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414E

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EA

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EAX

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EAZ

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EH

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EHA

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EHAX

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414EHAZ

PhotoMOS RELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQV414A

HIGH VOLTAGE, PHOTO MOS RELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414S

HIGH VOLTAGE, PHOTO MOS RELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414A

包装:散装 封装/外壳:6-SMD(0.300",7.62mm) 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

PanasonicElectricWorks

Panasonic Electric Works

产品属性

  • 产品编号:

    AQV414

  • 制造商:

    Panasonic Electric Works

  • 类别:

    继电器 > 固态继电器

  • 系列:

    PhotoMOS™ AQV

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 安装类型:

    通孔

  • 电路:

    DPST-NC(2 Form B)

  • 输出类型:

    AC,DC

  • 电压 - 输入:

    1.14VDC

  • 端接样式:

    PC 引脚

  • 封装/外壳:

    6-DIP(0.300",7.62mm)

  • 供应商器件封装:

    6-DIP

  • 描述:

    SSR RELAY DPST-NC 120MA 0-400V

供应商型号品牌批号封装库存备注价格
COSMO
12+
DIP-6
2980
只售全新原装货实数现货放心查询!
询价
PANASONIC
10000
全新原装 货期两周
询价
NAIS
20+
DIP
2860
原厂原装正品价格优惠公司现货欢迎查询
询价
PANASONIC/松下
2302+
DIP
23216
优势代理渠道,原装现货,可全系列订货
询价
NAIS
06+
DIP6
2000
询价
PANASONIC
2016+
DIP
26520
全新原装,假一罚十,公司主营继电器!
询价
NAIS
2016+
SOP
6523
只做原装正品现货!或订货!
询价
NAIS
DIP-6
700
原装长期供货!
询价
COSMO
10+
DIP-6
7800
全新原装正品,现货销售
询价
24+
SOP-6
18
询价
更多AQV414供应商 更新时间2024-12-7 10:32:00