N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU454 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

文件：72.45 Kbytes 页数：5 Pages

AOSMD

万国半导体

HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器

HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器

HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器