AOWF25S65数据手册批发供应万国半导体AOSMD-114ic电子网

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AOWF25S65	文件：271.38 Kbytes Page：6 Pages	650V 25A a MOS TM Power Transistor GeneralDescription TheAOW25S65&AOWF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65	文件：297.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65L	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65	文件：304.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65L	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65	文件：295.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOTF25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65L	文件：295.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOW25S65	文件：342.79 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOW25S65	文件：271.38 Kbytes Page：6 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOW25S65&AOWF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD

详细参数

型号：
AOWF25S65
功能描述：
MOSFET N-CH 650V 25A TO262F
RoHS：
是
类别：
分离式半导体产品 >> FET - 单
系列：
aMOS™
标准包装：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金属氧化物 FET
特点：
逻辑电平门
漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
C：
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
Vgs：
72nC @ 10V 输入电容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安装类型：
通孔
封装/外壳：
TO-220-3 整包
供应商设备封装：
TO-220FP
包装：
管件

供应商	型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	AOWF25S65	AOS	23+	TO-262F	700000	公主请下单柒号只做原装	询价
深圳市瑞新盛科技有限公司	AOWF25S65	AOS		TO-262F	20000	原装正品	询价
深圳市百视威讯电子科技有限公司	AOWF25S65		23+	N/A	49400	正品授权货源可靠	询价
深圳市科雨电子有限公司	AOWF25S65	AOS	1809+	SMD	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	AOWF25S65	AOS	22+	NA	6878	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	AOWF25S65	Alpha & Omega Semiconductor In	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	AOWF25S65	Alpha & Omega Semiconductor In	21+	TO2623 Long Leads I2Pak TO262A	13880	公司只售原装,支持实单	询价
深圳市大联智电子有限公司	AOWF25S65	Alpha & Omega Semiconductor In	2022+	TO2623 Long Leads I2Pak TO262A	6680	原厂原装，欢迎咨询	询价
深圳市智创诚芯电子科技有限公司	AOWF25S65	AOS	22+	TO-262F	25000	原装现货,价格优惠,假一罚十	询价
易创佳业科技（深圳）有限公司	AOWF25S65	Alpha & Omega Semiconductor In	23+	TO2623 Long Leads I2Pak TO262A	9000	原装正品，支持实单	询价

更多AOWF25S65供应商更新时间2024-4-29 13:00:00

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