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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AOWF11S60	文件：282.99 Kbytes Page：6 Pages	600V 11A a MOS TM Power Transistor GeneralDescription TheAOW11S60&AOWF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB11S60	文件：1.03889 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOB11S60	文件：297.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB11S60L	文件：1.03889 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOB11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOD11S60	文件：308.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOD11S60	文件：400.26 Kbytes Page：7 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOI11S60	文件：400.26 Kbytes Page：7 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOI11S60	文件：316.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT11S60	文件：1.033099 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOT11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT11S60L	文件：304.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：1.70843 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
AOTF11S60	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD

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详细参数

型号：
AOWF11S60
功能描述：
MOSFET N-CH 600V 11A TO262F
RoHS：
是
类别：
分离式半导体产品 >> FET - 单
系列：
aMOS™
标准包装：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金属氧化物 FET
特点：
逻辑电平门
漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
C：
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
Vgs：
72nC @ 10V 输入电容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安装类型：
通孔
封装/外壳：
TO-220-3 整包
供应商设备封装：
TO-220FP
包装：
管件

供应商	型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	AOWF11S60	AOS/万代	23+	TO-262	700000	公主请下单柒号只做原装	询价
深圳市泓利达微科技有限公司	AOWF11S60	AOS/万代	24+	TO-262F	333888	专业直销原装AOS一系列可订货	询价
深圳市力通伟业半导体有限公司	AOWF11S60	AOS	12+	TO262F	250	特价热销现货库存100%原装正品欢迎来电订购!	询价
深圳市瑞新盛科技有限公司	AOWF11S60	AOS		TO-262F	20000	原装正品	询价
深圳市百视威讯电子科技有限公司	AOWF11S60		23+	N/A	59810	正品授权货源可靠	询价
深圳兆威电子有限公司	AOWF11S60	AOS万代	2019	TO-262F	55000	原装正品现货假一赔十	询价
深圳市百诺芯科技有限公司	AOWF11S60	AOS/万代	23+	TO-262F	24190	原装正品代理渠道价格优势	询价
深圳市百域芯科技有限公司	AOWF11S60	AOS/万代	21+	TO-262F	30000	优势供应实单必成可13点增值税	询价
深圳市科雨电子有限公司	AOWF11S60	AOS	1809+	SMD	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市汇莱威科技有限公司	AOWF11S60	AOS/万代		TO-262F	265209	假一罚十原包原标签常备现货!	询价

更多AOWF11S60供应商更新时间2024-5-1 13:00:00

详细参数

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