N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU4

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AOSMD

万国半导体

TO-8 CASCADABLE AMPLIFIER

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TELEDYNE

华特力科

N-CHANNEL ENHANCEMENT MODE

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 1

文件：57.52 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 140 Watts. Gain = 1

文件：57.52 Kbytes 页数：4 Pages

ADPOW