TO-8 CASCADABLE AMPLIFIER

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TELEDYNE

华特力科

Amplifiers

Teledyne RF & Microwave

Damper diode

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent

文件：52 Kbytes 页数：7 Pages

PHI

PHI

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic

文件：108.45 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION

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STMICROELECTRONICS

意法半导体