| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ARF448A | N-CHANNEL ENHANCEMENT MODE TheARF448AandARF448BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto65MHz. Specified150Volt,40.68MHzCharacteristics: OutputPower=140Watts. Gain=1 | ADPOW Advanced Power Technology | ADPOW | |
ARF448A | N-CHANNEL ENHANCEMENT MODE | ADPOW Advanced Power Technology | ADPOW | |
N-CHANNEL ENHANCEMENT MODE | ADPOW Advanced Power Technology | ADPOW | ||
包装：托盘 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FETS N CH 450V 15A TO247 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
Linearmotion0.2wattcompositionslidecontrol | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
SurfaceMountFuses | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.60ohm,Id=11A) DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD448isPb-free(meetsROHS&Sony259specifications).AO | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD448isPb-free(meetsROHS&Sony259specifications).AO | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU448isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU448isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TO-8CASCADABLEAMPLIFIER | TELEDYNE TELEDYNE | TELEDYNE | ||
N-CHANNELENHANCEMENTMODE TheARF448AandARF448BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto65MHz. Specified150Volt,40.68MHzCharacteristics: OutputPower=140Watts. Gain=1 | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODE TheARF448AandARF448BcompriseasymmetricpairofcommonsourceRFpowertransistorsdesignedforpushpullscientific,commercial,medicalandindustrialRFpoweramplifierapplicationsupto65MHz. Specified150Volt,40.68MHzCharacteristics: OutputPower=140Watts. Gain=1 | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODE | ADPOW Advanced Power Technology | ADPOW |
详细参数
- 型号：
ARF448A
- 制造商：
ADPOW
- 制造商全称：
Advanced Power Technology
- 功能描述：
N-CHANNEL ENHANCEMENT MODE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
90550 |
正品授权货源可靠 |
询价 | |||
MICROSEMI |
2023+ |
TO-247CS |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
MICROSEMI/美高森美 |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
APT |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MICROSEMI/美高森美 |
2022+ |
TO-247CS |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
封装 |
2022+ |
SOP/DIP |
7300 |
原装现货 |
询价 | ||
APT |
TO-3P |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
MICROSEMI/美高森美 |
2021+ |
TO-247 |
12300 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
Microsemi/美高森美 |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
询价 |
相关规格书
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相关库存
更多- ARF448BG
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