RF VDMOS Power Devices

ROHS

Microchip

微芯科技

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified

文件：147.06 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET N-CH 1000V TO247

MICROCHIP

微芯科技

N-CHANNEL ENHANCEMENT MODE

RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high

文件：97.76 Kbytes 页数：4 Pages

ADPOW

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified

文件：147.06 Kbytes 页数：4 Pages

MICROSEMI

美高森美

RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified

文件：147.06 Kbytes 页数：4 Pages

MICROSEMI

美高森美